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Thin Films of Multiferroic BiCoO3: by Atomic Layer Deposition
by:Knut Bjarne Gandrud
The goal of this work was to deposit thin films of bismuth cobalt oxide, which is a rather unexplored yet promising multiferroic material, by Atomic Layer Deposition(ALD). However, in order to achieve this goal, first a suitable precursor combination for deposition of bismuth oxide by ALD had to be found. This work presents the first reported thin...
The goal of this work was to deposit thin films of bismuth cobalt oxide, which is a rather unexplored yet promising multiferroic material, by Atomic Layer Deposition(ALD). However, in order to achieve this goal, first a suitable precursor combination for deposition of bismuth oxide by ALD had to be found. This work presents the first reported thin film deposition of ?-Bi2O3 by ALD. In addition, thin films of Co3O4 and CoO are for the first time reported deposited by ALD from the respective novel precursor combinations Co(thd)3/O3 and Co(thd)2/H2O (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate). Finally, BiPh3 (Ph = phenyl), Bi(t-OBu)3 (t-OBu = tert-butoxide) and Bi(thd)3 were all investigated for potential use as bismuth precursors in the ALD process. Thin films of Co3O4 deposited from the novel precursor combination Co(thd)3/O3 was investigated and a comparison to the already well investigated precursor combination Co(thd)2/O3 is given. Deposition and investigation of thin films in the Bi-Co-O system are also presented. However, an etching process was observed between the Bi(thd)3 precursors and the Co3O4 surface. A possible mechanism is presented.
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