We strive to deliver the best value to our customers and ensure complete satisfaction for all our textbook rentals.
You can return your online books for any reason within our refund period – no questions asked.
Every order is available for express shipping, and return shipping is always free.
You'll be happy with the quality of your books (or we'll ship you another one on our dime).
You can extend your rental up to 14 days – at the same cheap daily rental rate.
If you decide to keep the book it will never cost more than the purchase price.
As always, you have access to over 5 million titles. Plus, you can choose from 5 rental periods, so you only pay for what you’ll use. And if you ever run into trouble, our top-notch U.S. based Customer Service team is ready to help by email, chat or phone.
Supplemental materials are not guaranteed for used textbooks or rentals (access codes, DVDs, workbooks).
Band Tailings and Deep Defects in Semiconductors (Defect and Diffusion Forum, Vol 133)
by:A. A. Teate, N. C. Halder
This textbook treats the effects of finite temperatures on weakly disordered hydrogenated amorphous silicon and hydrogenated amorphous germanium, as well as the effect of weak disorder on more complex systems, such as GaAs and its alloy A1xGa1-xAs. For the elemental amorphous systems, the book uses a self-consistent treatment of localization on a Cayley...
This textbook treats the effects of finite temperatures on weakly disordered hydrogenated amorphous silicon and hydrogenated amorphous germanium, as well as the effect of weak disorder on more complex systems, such as GaAs and its alloy A1xGa1-xAs. For the elemental amorphous systems, the book uses a self-consistent treatment of localization on a Cayley tree for weak disorder described by a Cauchy-Lorentzian distribution of site energies. The treatment is generalized to a system with n electronic states at each site, and is an extension of the usually considered model for disordered systems. The effect of the electron-phonon interaction on the site energy distribution is consistently taken into account, not only in the distribution of the self-energy, but also in that of the derivative of the self-energy, which determines the mobility edge, Ec. This important improvement leads to a temperature-dependent Ec which reduces to well-known results in the zero-temperature and zero-disorder limits. The mobility gap and its temperature co-efficient determined from these calculations are compared with optical gap data obtained from isoabsorption, photoluminescence and optical transmission measurements on hydrogenated amorphous silicon and germanium. Further, the effects of disorder-induced band tailing on deep levels in compound semiconductor alloys, such as GaAs and A1xGa1-xAs are studied. In particular, the assumption of Gaussian broadening of the defect density of states proposed earlier by others on the basis of the central limit theorem is eliminated. The results indicate that standard experimental measurements of DLTS, without appropriate corrections, in general, can underestimate the activation energy and capture cross-section, even in the case of weak disorder.
Out of Stock
We're fresh out of that one today.
So sorry. Try back another time as our inventory fluctuates daily.
Since launching the first textbook rental site in 2006, BookRenter has never wavered from our mission to make education more affordable for all students. Every day, we focus on delivering students the best prices, the most flexible options, and the best service on earth. On March 13, 2012 BookRenter.com, Inc. formally changed its name to Rafter, Inc. We are still the same company and the same people, only our corporate name has changed.